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    Structure and Application of Galvanomagnetic Devices: International Series of Monographs on Semiconductors
    Semiconducting III–V Compounds: International Series of Monographs on Semiconductors
    Ebook series2 titles

    International Series of Monographs on Semiconductors

    By C. Hilsum, H. Weiss and A. C. Rose-Innes

    ()

    About this series

    International Series of Monographs on Semiconductors, Volume 8: Structure and Application of Galvanomagnetic Devices focuses on the composition, reactions, transformations, and applications of galvanomagnetic devices.

    The book first ponders on basic physical concepts, design and fabrication of galvanomagnetic devices, and properties of galvanomagnetic devices. Discussions focus on changes in electrical properties on irradiation with high-energy particles, magnetoresistor field-plate, Hall generator, preparation of semiconductor films by vacuum deposition, structure of field-plate magnetoresistors, growth of semiconductors from the melt, and galvanomagnetic materials and effects. The text then elaborates on the applications of the Hall effect and the magnetoresistance effect. Topics include contactless control, connecting the field-plate to other semiconductor devices, non-contacting variable resistance and potentiometer, measurement of magnetic fields and quantities proportional to magnetic fields, and measurement of quantities representable by a magnetic induction. The manuscript underscores other possibilities for controlling the electrical properties of semiconductors by means of a magnetic field.

    The publication is a vital source of data for researchers wanting to explore the structure and applications of galvanomagnetic devices.
    LanguageEnglish
    PublisherElsevier Science
    Release dateJul 17, 2014
    Structure and Application of Galvanomagnetic Devices: International Series of Monographs on Semiconductors
    Semiconducting III–V Compounds: International Series of Monographs on Semiconductors

    Titles in the series (2)

    • 1

      Semiconducting III–V Compounds: International Series of Monographs on Semiconductors
      Semiconducting III–V Compounds: International Series of Monographs on Semiconductors

      Semiconducting III–V Compounds: International Series of Monographs on Semiconductors

      C. Hilsum
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      Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide). Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, focusing on the properties of the zinc-blende structure as well as processes ranging from ionicity and infrared lattice absorption to electronegativity. The reader is then introduced to the band structure of III-V compounds and its theoretical aspects, along with cyclotron resonance and the diamagnetic Landau effect. Subsequent chapters discuss impurities and defects; optical and electrical properties; photoelectric effects; and preparation and applications of III-V compounds. This monograph will be of interest to physicists.

      Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide). Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, focusing on the properties of the zinc-blende structure as well as processes ranging from ionicity and infrared lattice absorption to electronegativity. The reader is then introduced to the band structure of III-V compounds and its theoretical aspects, along with cyclotron resonance and the diamagnetic Landau effect. Subsequent chapters discuss impurities and defects; optical and electrical properties; photoelectric effects; and preparation and applications of III-V compounds. This monograph will be of interest to physicists.

    • 8

      Structure and Application of Galvanomagnetic Devices: International Series of Monographs on Semiconductors
      Structure and Application of Galvanomagnetic Devices: International Series of Monographs on Semiconductors

      Structure and Application of Galvanomagnetic Devices: International Series of Monographs on Semiconductors

      H. Weiss
      0 ratings
      0 ratings

      International Series of Monographs on Semiconductors, Volume 8: Structure and Application of Galvanomagnetic Devices focuses on the composition, reactions, transformations, and applications of galvanomagnetic devices. The book first ponders on basic physical concepts, design and fabrication of galvanomagnetic devices, and properties of galvanomagnetic devices. Discussions focus on changes in electrical properties on irradiation with high-energy particles, magnetoresistor field-plate, Hall generator, preparation of semiconductor films by vacuum deposition, structure of field-plate magnetoresistors, growth of semiconductors from the melt, and galvanomagnetic materials and effects. The text then elaborates on the applications of the Hall effect and the magnetoresistance effect. Topics include contactless control, connecting the field-plate to other semiconductor devices, non-contacting variable resistance and potentiometer, measurement of magnetic fields and quantities proportional to magnetic fields, and measurement of quantities representable by a magnetic induction. The manuscript underscores other possibilities for controlling the electrical properties of semiconductors by means of a magnetic field. The publication is a vital source of data for researchers wanting to explore the structure and applications of galvanomagnetic devices.

      International Series of Monographs on Semiconductors, Volume 8: Structure and Application of Galvanomagnetic Devices focuses on the composition, reactions, transformations, and applications of galvanomagnetic devices. The book first ponders on basic physical concepts, design and fabrication of galvanomagnetic devices, and properties of galvanomagnetic devices. Discussions focus on changes in electrical properties on irradiation with high-energy particles, magnetoresistor field-plate, Hall generator, preparation of semiconductor films by vacuum deposition, structure of field-plate magnetoresistors, growth of semiconductors from the melt, and galvanomagnetic materials and effects. The text then elaborates on the applications of the Hall effect and the magnetoresistance effect. Topics include contactless control, connecting the field-plate to other semiconductor devices, non-contacting variable resistance and potentiometer, measurement of magnetic fields and quantities proportional to magnetic fields, and measurement of quantities representable by a magnetic induction. The manuscript underscores other possibilities for controlling the electrical properties of semiconductors by means of a magnetic field. The publication is a vital source of data for researchers wanting to explore the structure and applications of galvanomagnetic devices.

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