Scientists at the Physics and Engineering Department of the UK’s Lancaster University published a new paper describing ULTRARAM. A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon.
I think this tech is a game changer but I still have my doubts. Let us discuss
0:00 Intro
0:30 RAM
4:00 SSD
11:00 UltraRAM
17:30 Doubts

* RAM (Dynamic RAM)
* Fast access with capacitors
* random access
* requires power to be refreshed
* Flash NAND (SSD)
* Pros fast random access (FTL)
* Block storage
* Requires high voltage (20V to erase/ 7.5 to program)
* Low durability endurance which then (write amplification + garbage collection )
* UltraRAM uses a new novel approach to the memory cell design that only need 2.5 V to program/erase, low power which saves the memory cell lifetime https://www.sciencedirect.com/topics/engineering/fowler-nordheim-tunnelling
* High endurance program/erase last longer
* High retention
* GC/WA not required
* Limitations: still we know very little

https://onlinelibrary.wiley.com/doi/10.1002/aelm.202101103